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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2654 DESCRIPTION *With TO-220 package *Complement to type 2SA1129 *Low collector saturation votage APPLICATIONS *For low-frequency power amplifiers and mid-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 40 7 7 15 3.5 40 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3A ;IB=0.1A IC=5A ;IB=0.5A IC=3A ;IB=0.1A IC=5A ;IB=0.5A VCB=40V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=1V IC=5A ; VCE=1V 40 20 MIN SYMBOL VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 2SC2654 TYP. MAX 0.3 0.6 1.5 2.0 10 10 320 UNIT V V V V A A Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=0.5 A ,IB2=-0.5A VCC>20V, RL=4.0@ 1.0 2.5 1.0 s s s hFE-1 Classifications M 40-80 L 60-120 K 100-200 J 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2654 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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